Master of Science in Electrical and Computer Engineering - Solid State Devices
關於課程
Solid state devices is a wide area of electronic devices and systems based on semiconductors. Those materials could be elemental semiconductors, such as silicon (Si) and germanium (Ge), or compound semiconductors that combine two or more materials from the periodic table, such as GaAs, InP, and AlGaAs. Silicon, the most studied material in the periodic table, has been the material of choice for semiconductor device fabrication since the early 1960s. Compound semiconductors, on the other hand, have electrical properties superior to Si and are now replacing Si in high-speed electronic applications. The main advantage of these semiconductors is that their electronic properties can be precisely tailored to specific electronic and photonic applications. The solid state device area concentrates on theory and device fabrication to provide a solid background for future electronic device development.
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Entry requirements for 伊利諾大學芝加哥分校
MS applicants: Successful master?s program applicants should have an undergraduate degree from an accredited college or university in electrical engineering, computer engineering, or a related field. MS applicants should have a GPA of 3.0 or higher on a scale of 4.0, based on the last 60 hours of undergraduate coursework completed. Download our MS degree booklet for an overview of our master?s program.
Transcripts of all previous undergraduate and graduate work
GRE general test scores (non-U.S. degree holders only). GRE general test scores are required for applicants earned their undergraduate degree outside the United States. Students who received degrees from U.S. colleges and universities do not need to submit scores but are encouraged to do so if they feel their test performance would enhance their prospects for admission or financial aid. For score reporting, our institution code is 1851, and no department code is required.
English competency test. Applicants whose native language is not English are required to take an English competency test. Minimum required scores are: iBT Internet-based TOEFL of 80, with subscores of Reading 19, Listening 17, Speaking 20, and Writing 21, New Paper-Based TOEFL (after August 2018) of 60, with subscores of Reading 19, Listening 17, Writing 21, Institutional Testing Paper-Based TOEFL (prior to August 2018) of 550, IELTS of 6.5, with all four subscores of at least 6.0,
English language requirements
托福(TOEFL iBT)總分: 80.0
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