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Master of Science in Engineering in Electrical and Computer Engineering - Solid State Devices and Nanotechnology (High Frequency Devices and Circuits)

在密西根大學安娜堡分校
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United States

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課程級別

碩士學位課程

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2 Semester(s)

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26 August 2024

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6.5 IELTS

Research projects in the Solid-State and Nanotechnology area cover a wide variety of topics. Experimental research in integrated photonics and optoelectronics spans work varying from device design and fabrication, device physics, optoelectronic integrated circuits and photonic integrated circuits for communication, imaging and sensing, solar cells, to the integration of III-V based photonics with Si CMOS. In many of these areas, the experimental work is complemented by theory, modeling and analysis. Research in organic and molecular electronics includes organic field-effect transistors, integrated circuits and light-emitting devices on glass and plastic substrates, hydrogenated amorphous silicon thin-film transistors and active-matrix arrays on glass and plastic substrates for flat panel displays and sensors, and active-matrix organic light-emitting display technology. Faculty are leaders in the research of high performance electronic and optoelectronic devices based on high quality compound semiconductor materials and complex semiconductor heterostructures. Research is being conducted in the epitaxial growth of compound semiconductor materials, where three molecular beam epitaxy systems and one metal-organic chemical vapor deposition system are currently under extensive use for the research of new materials and to support device research.

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  • 課程總長: 2 Semester(s)
  • 費用: 無法取得
In學年take 位置
Winter (January), 2024 Ann Arbor
Fall (August), 2024 Ann Arbor
Fall (August), 2025 Ann Arbor

Entry requirements for 密西根大學安娜堡分校

TOEFL ibt: 84, TOEFL Paper/Pencil TOEFL and TWE (For tests taken prior to July 2017): 560 and Revised Paper Delivered Test (For tests taken July 2017 or later) An overall score is not provided for this test. Minimum section scores: Reading = 23, Listening = 23, Writing = 21. IELTS: 6.5. Applicants complete a bachelor?s degree from a U.S. college or university accredited by a regional accrediting association, or complete an international degree that is equivalent to a U.S. bachelor?s degree from a college or university recognized and approved by the Ministry of Education or Commission responsible for higher education in the country where the degree is earned.

English language requirements

托福(TOEFL iBT)總分: 84.0

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